Defect-related density of states in low-band gap InxGa1-xAs/InAsyP1-y double heterostructures grown on InP substrates
Identifieur interne : 00E111 ( Main/Repository ); précédent : 00E110; suivant : 00E112Defect-related density of states in low-band gap InxGa1-xAs/InAsyP1-y double heterostructures grown on InP substrates
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Abstract
We have measured the excitation-dependent radiative efficiency in a set of lattice-matched InxGa1-xAs/InAsyP1-y double heterostructures incrementally lattice mismatched to InP substrates. We find that the overall rate of defect-related recombination shows little change from the lattice-matched case. However, the excitation-dependent transition between defect-related and radiative recombination changes dramatically with mismatch. While a simple defect recombination model assuming defect levels concentrated near the middle of the band gap fits well for the lattice-matched material, the model does not fit the shape of the efficiency curve for the mismatched structures. We show that the addition of band edge exponential tails to the defect-related density of states gives a much better theoretical fit. © 2002 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Defect-related density of states in low-band gap In<sub>x</sub>Ga<sub>1-x</sub>As/InAs<sub>y</sub>P<sub>1-y</sub> double heterostructures grown on InP substrates</title><author><name sortKey="Gfroerer, T H" uniqKey="Gfroerer T">T. H. Gfroerer</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, Davidson College, Davidson, North Carolina 28036</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Caroline du Nord</region></placeName><wicri:cityArea>Department of Physics, Davidson College, Davidson</wicri:cityArea></affiliation><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>National Renewable Energy Laboratory, Golden, Colorado 80401</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Colorado</region></placeName><wicri:cityArea>National Renewable Energy Laboratory, Golden</wicri:cityArea></affiliation></author><author><name sortKey="Priestley, L P" uniqKey="Priestley L">L. P. 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Wanlass</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, Davidson College, Davidson, North Carolina 28036</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Caroline du Nord</region></placeName><wicri:cityArea>Department of Physics, Davidson College, Davidson</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">02-0302578</idno><date when="2002-06-17">2002-06-17</date><idno type="stanalyst">PASCAL 02-0302578 AIP</idno><idno type="RBID">Pascal:02-0302578</idno><idno type="wicri:Area/Main/Corpus">00F248</idno><idno type="wicri:Area/Main/Repository">00E111</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Defect states</term><term>Electron-hole recombination</term><term>Electronic density of states</term><term>Energy gap</term><term>Experimental study</term><term>Gallium arsenides</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Photoluminescence</term><term>Semiconductor heterojunctions</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7320H</term><term>7320A</term><term>7155E</term><term>7855C</term><term>Etude expérimentale</term><term>Bande interdite</term><term>Densité état électron</term><term>Etat défaut</term><term>Hétérojonction semiconducteur</term><term>Recombinaison électron trou</term><term>Indium composé</term><term>Gallium arséniure</term><term>Semiconducteur III-V</term><term>Photoluminescence</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We have measured the excitation-dependent radiative efficiency in a set of lattice-matched In<sub>x</sub>Ga<sub>1-x</sub>As/InAs<sub>y</sub>P<sub>1-y</sub> double heterostructures incrementally lattice mismatched to InP substrates. We find that the overall rate of defect-related recombination shows little change from the lattice-matched case. However, the excitation-dependent transition between defect-related and radiative recombination changes dramatically with mismatch. While a simple defect recombination model assuming defect levels concentrated near the middle of the band gap fits well for the lattice-matched material, the model does not fit the shape of the efficiency curve for the mismatched structures. 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We find that the overall rate of defect-related recombination shows little change from the lattice-matched case. However, the excitation-dependent transition between defect-related and radiative recombination changes dramatically with mismatch. While a simple defect recombination model assuming defect levels concentrated near the middle of the band gap fits well for the lattice-matched material, the model does not fit the shape of the efficiency curve for the mismatched structures. 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